关断延迟时间(Td(off)):282ns,关断损耗(Eoff):12.5mJ,反向传输电容(Cres):0.62nF,反向恢复时间(Trr):175ns,导通损耗(Eon):8.5mJ,开启延迟时间(Td(on)):135ns,栅极阈值电压(Vge(th)):5V@4mA,耗散功率(Pd):1360W,输入电容(Cies):12.6nF,集射极击穿电压(Vces):1200V,集射极饱和电压(VCE(sat)):2V@200A,15V,集电极电流(Ic):200A
| 属性 | 参数值 | 其他 |
|---|---|---|
| 商品目录 | IGBT管/模块 | |
| 关断延迟时间(Td(off)) | 282ns | |
| 关断损耗(Eoff) | 12.5mJ | |
| 反向传输电容(Cres) | 0.62nF | |
| 反向恢复时间(Trr) | 175ns | |
| 导通损耗(Eon) | 8.5mJ | |
| 开启延迟时间(Td(on)) | 135ns | |
| 栅极阈值电压(Vge(th)) | 5V@4mA | |
| 耗散功率(Pd) | 1360W | |
| 输入电容(Cies) | 12.6nF | |
| 集射极击穿电压(Vces) | 1200V | |
| 集射极饱和电压(VCE(sat)) | 2V@200A,15V | |
| 集电极电流(Ic) | 200A |