IGBT类型:FS(场截止),关断延迟时间(Td(off)):450ns,关断损耗(Eoff):25mJ,反向传输电容(Cres):1.05nF,导通损耗(Eon):9.9mJ,工作温度:-40℃~+150℃,开启延迟时间(Td(on)):170ns,栅极阈值电压(Vge(th)):2.1V@15V,300A,耗散功率(Pd):1600W,输入电容(Cies):18.5nF,集射极击穿电压(Vces):1200V,集射极饱和电压(VCE(sat)):2.1V@300A,15V,集电极电流(Ic):450A
| 属性 | 参数值 | 其他 |
|---|---|---|
| 商品目录 | IGBT管/模块 | |
| IGBT类型 | FS(场截止) | |
| 关断延迟时间(Td(off)) | 450ns | |
| 关断损耗(Eoff) | 25mJ | |
| 反向传输电容(Cres) | 1.05nF | |
| 导通损耗(Eon) | 9.9mJ | |
| 工作温度 | -40℃~+150℃ | |
| 开启延迟时间(Td(on)) | 170ns | |
| 栅极阈值电压(Vge(th)) | 2.1V@15V,300A | |
| 耗散功率(Pd) | 1600W | |
| 输入电容(Cies) | 18.5nF | |
| 集射极击穿电压(Vces) | 1200V | |
| 集射极饱和电压(VCE(sat)) | 2.1V@300A,15V | |
| 集电极电流(Ic) | 450A |